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Design Exploration of Emerging Nano-scale Non-volatile Memory

de Hao Yu, Yuhao Wang ...

Series series Engineering (R0)
This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies ... Leer más

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This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies
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Semiconductor Technologies in the Era of Electronics

de Yong Hoon Kang ...

Series series Engineering (R0)
Technological advances in the field of materials, devices, circuits, and systems began by the discovery of new properties of objects, or the entrepreneurship with the applications of unique or practical concepts for commercial goods. To implement products using these findings and challenges textbook knowledge is usually sufficient. Semiconductor Technologies in the Era of Electronics therefore ... Leer más

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Technological advances in the field of materials, devices, circuits, and systems began by the discovery of new properties of objects, or the entrepreneurship with the applications of unique or practical concepts for commercial goods. To implement products using these findings and challenges textbook knowledge is usually sufficient. Semiconductor Technologies in the Era of Electronics therefore
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Research on the Radiation Effects and Compact Model of SiGe HBT

de Yabin Sun ...

Series series Engineering (R0)
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by ... Leer más

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This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by
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CMOS Test and Evaluation

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Series series Engineering (R0)
CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers ... Leer más

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CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers
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Advanced Materials

Techniques, Physics, Mechanics and Applications

Edición de Ivan A. Parinov, Shun-Hsyung Chang, Muaffaq A. Jani ...

Series series Springer Nature Proceedings excluding Computer Science
This book presents 50 selected peer-reviewed reports from the 2016 International Conference on “Physics and Mechanics of New Materials and Their Applications”, PHENMA 2016 (Surabaya, Indonesia, 19–22 July, 2016). The Proceedings are devoted to processing techniques, physics, mechanics, and applications of advanced materials. As such, they examine a wide spectrum of nanostructures, ferroelectric ... Leer más

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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved
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This book first provides a comprehensive coverage of state-of-the-art validation solutions based on real-time signal tracing to guarantee the correctness of VLSI circuits. The authors discuss several key challenges in post-silicon validation and provide automated solutions that are systematic and cost-effective. A series of automatic tracing solutions and innovative design for debug (DfD)
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Physics of Wurtzite Nitrides and Oxides

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