Showing results for "roberto gastaldi"
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Adult content is visible.2020
EN
This book presents a collection of “lessons” on various topics commonly encountered in electronic circuit design, including some basic circuits and some complex electronic circuits, which it uses as vehicles to explain the basic circuits they are composed of. The circuits considered include a linear amplifier, oscillators, counters, a digital clock, power supplies, a heartbeat detector, a sound equalizer, an audio power amplifier and a radio. The theoretical analysis has been deliberately ...
In Search of the Next Memory
Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories
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- Engineering (R0)
2017
EN
This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of...
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Self-Organized Quantum Dots for Memories
Electronic Properties and Carrier Dynamics
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- Physics and Astronomy (R0)
2013
EN
Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times.This thesis investigates the electronic properties of and carrier dynamics in self-o...
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- Chemistry and Material Science (R0)
2013
EN
This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines. The section on ALD for memories covers both mass-produced memories, such as DRAM and Flash, and emerging memories, such as PCRAM and FeRAM. The section on ALD for logic devices covers both front-end of the line processes and back-end of the line processes. The final...
- Series -
- Engineering (R0)
2014
EN
Technological advances in the field of materials, devices, circuits, and systems began by the discovery of new properties of objects, or the entrepreneurship with the applications of unique or practical concepts for commercial goods. To implement products using these findings and challenges textbook knowledge is usually sufficient. Semiconductor Technologies in the Era of Electronics therefore does not aim to look deeper in certain areas but it offers a broad and comprehensive ove...
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- Engineering (R0)
2017
EN
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser micro...
CMOS Test and Evaluation
A Physical Perspective
2014
EN
CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifica...
Advanced Materials
Techniques, Physics, Mechanics and Applications
2017
EN
This book presents 50 selected peer-reviewed reports from the 2016 International Conference on “Physics and Mechanics of New Materials and Their Applications”, PHENMA 2016 (Surabaya, Indonesia, 19–22 July, 2016). The Proceedings are devoted to processing techniques, physics, mechanics, and applications of advanced materials. As such, they examine a wide spectrum of nanostructures, ferroelectric crystals, materials and composites, as well as other promising materials with special properties...
2018
EN
This book describes the physical basis of microwave electronics and related topics, such as microwave vacuum and microwave semiconductor devices.It comprehensively discusses the main types of microwave vacuum and microwave semiconductor devices, their principles of action, theory, parameters and characteristics, as well as ways of increasing the frequency limit of various devices up to the terahertz frequency band. Further, it applies a unified approach to describe charged particle...
2013
EN
This book provides a comprehensive introduction to integrated optical waveguides for information technology and data communications. Integrated coverage ranges from advanced materials, fabrication, and characterization techniques to guidelines for design and simulation. A concluding chapter offers perspectives on likely future trends and challenges. The dramatic scaling down of feature sizes has driven exponential improvements in semiconductor productivity and performance in the past sever...
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- Engineering (R0)
2013
EN
This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc. The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the “memory wall.” The authors discuss memory design from various perspectives: emerging memory technologies are emplo...
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- Physics and Astronomy (R0)
2016
EN
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•c...











